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  all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! PTFB241402F customer-specific spec ? not for general release data sheet 1 of 13 rev. 03, 2010-04-19 *see infineon distributor for future availability. cw performance, single side v dd = 30 v, i dq = 660 ma 15.6 15.8 16.0 16.2 16.4 16.6 16.8 17.0 17.2 17.4 40 41 42 43 44 45 46 47 48 49 output power (dbm) gain (db) 15 20 25 30 35 40 45 50 55 60 gain efficiency efficiency (%) 2320 mhz 2350 mhz 2380 mhz high power rf ldmos field effect transistor 140 w, 2300 ? 2400 mhz description the PTFB241402F integrates two ldmos fets into one open-cavity ceramic package. it is designed for cellular amplifier applications in the 2300 to 2400 mhz frequency band. manufactured with infineon?s advanced ldmos process, this device offers excellent thermal performance and superior reliability. PTFB241402F package h-37248-4 features ? broadband internal matching ? typical cw performance, single side - output power (1db compression) = 70 w - efficiency = 55% ? increased negative gate-source voltage range for improved performance in doherty amplifiers ? integrated esd protection: human body model, class 2 (minimum) ? excellent thermal stability ? capable of handling 10:1 vswr @ 30 v, 70?w (cw) output power ? pb-free and rohs compliant rf characteristics two-tone measurements ( tested in infineon test fixture, combined outputs ) v dd = 30 v, i dq = 1200 ma, p out = 110 w pep, ? = 2370 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps 16.5 17 ? db drain efficiency h d 34.5 37 ? % intermodulation distortion imd ? ?32 ?30 dbc
PTFB241402F customer-specific spec ? not for general release data sheet 2 of 13 rev. 03, 2010-04-19 *see infineon distributor for future availability. dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 ? ? v drain leakage current v ds = 30 v, v gs = 0 v i dss ? ? 1.0 a drain leakage current v ds = 63 v, v gs = 0 v i dss ? ? 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.3 ? w operating gate voltage v ds = 30 v, i dq = 660 ma v gs 2.3 2.8 3.3 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?6 to +10 v junction temperature t j 200 c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70c, 140 w cw ) r q jc 0.38 c/w ordering information type and version package outline package description shipping PTFB241402F v1 h-37248-4 thermally-enhanced earless flange tray PTFB241402F v1 r250 h-37248-4 thermally-enhanced earless flange tape & reel, 250 pcs
PTFB241402F customer-specific spec ? not for general release data sheet 3 of 13 rev. 03, 2010-04-19 cw performance, single side v dd = 30 v, i dq = 660 ma 14.0 15.0 16.0 17.0 18.0 40 41 42 43 44 45 46 47 48 49 output power (dbm) gain (db) 20 30 40 50 60 gain efficiency efficiency (%) -25c 25c 90c cw sweep at p -1db, single side v dd = 30 v, i dq = 660 ma 15.5 16.0 16.5 17.0 17.5 40 41 42 43 44 45 46 47 48 49 output power (dbm) gain (db) 20 30 40 50 60 drain efficiency (%) gain efficiency 2320 mhz 2350 mhz 2380 mhz typical performance (data taken in a production test fixture) cw gain & efficiency vs. output power & v dd, single side ? = 2350 mhz, i dq = 660 ma 15.0 15.5 16.0 16.5 17.0 17.5 39 40 41 42 43 44 45 46 47 48 49 50 output power (dbm) power gain (db) 10 20 30 40 50 60 efficiency (%) v dd = 32 v v dd = 30 v v dd = 28 v efficiency gain small signal cw gain & input return loss, single side v dd = 30 v, i dq = 660 ma 15.0 15.5 16.0 16.5 17.0 17.5 18.0 2150 2250 2350 2450 2550 frequency (mhz) power gain (db) -30 -25 -20 -15 -10 -5 0 input return loss (db) irl gain
PTFB241402F customer-specific spec ? not for general release data sheet 4 of 13 rev. 03, 2010-04-19 typical performance (cont.) two-tone performance at various i dq, single side ? = 2350 mhz, v dd = 30 v, i dq = varying -60 -55 -50 -45 -40 -35 -30 -25 -20 34 36 38 40 42 44 46 48 average output power (dbm) 3rd order imd (dbc) 560 ma 610 ma 660 ma 710 ma 760 ma two-tone performance at selected frequencies, single side v dd = 30 v, i dq = 660 ma, 1 mhz spacing -10 0 10 20 30 40 50 38 39 40 41 42 43 44 45 46 47 average output power (dbm) efficiency (%) -60 -50 -40 -30 -20 -10 0 imd (dbc) efficiency imd3 imd5 2320 mhz 2350 mhz 2380 mhz wimax performance, single side v dd = 30 v, i dq = 680 ma, modulation = 64 qam2/3, channel bandwidth = 1.75 mhz, sample rate = 2 mhz) 0 5 10 15 20 25 24 26 28 30 32 34 36 38 40 average output power (dbm) efficiency (%) -45 -40 -35 -30 -25 -20 evm (dbc) efficiency evm ? = 2.32 ghz ? = 2.35 ghz ? = 2.38 ghz
PTFB241402F customer-specific spec ? not for general release data sheet 5 of 13 rev. 03, 2010-04-19 0.1 0.3 0.5 0.2 0.4 0 . 1 0 . 1 0 . 2 - w a v e l e n g t h s t o w < - - - w a v e l e n g t h s t o w a r d l o a d - 0 . 0 z source z load 2380 mhz 2380 mhz 2320 mhz 2320 mhz z 0 = 50 w broadband circuit impedance z source z load g d g s d frequency z source w z load w mhz r jx r jx 2320 27.0 ?16.0 3.0 ?4.1 2350 25.0 ?8.8 3.0 ?4.5 2380 27.5 ?5.7 2.8 ?4.5
PTFB241402F customer-specific spec ? not for general release data sheet 6 of 13 rev. 03, 2010-04-19 1 2 3 tl 817 tl 816 tl 814 s c b e 1 2 3 4 s 6 c 803 1000 pf c 804 1000 pf c 805 1000 pf r 806 10 ohm tl 834 tl 836 tl 832 tl 833 1 2 3 tl 815 r 802 2000 ohm r 803 10 ohm r 801 1200 ohm r 804 1300 ohm tl 825 1 2 3 tl 823 1 2 3 tl 821 tl 824 1 2 3 tl 818 tl 819 1 2 3 tl 820 tl 801 tl 802 tl 803 tl 804 tl 805 tl 806 tl 807 tl 808 tl 809 tl 810 1 2 3 tl 811 1 2 3 tl 812 tl 831 tl 840 1 2 3 tl 839 c 806 1 . 2 pf tl 838 tl 843 1 2 3 tl 835 c 808 1 . 2 pf l 801 22 nh r 805 3000 ohm 1 2 3 tl 813 tl 830 1 2 3 tl 826 tl 828 tl 829 c 802 10000000 pf c 801 10000000 pf 1 2 3 tl 827 tl 822 pin g 1 gate dut 3 s 2 3 s 3 in out nc nc 1 2 3 4 5 6 7 8 s 1 1 2 3 4 s 4 1 2 3 4 s 5 r 808 10 ohm l 802 22 nh r 809 10 ohm tl 842 tl 837 tl 841 r 807 3000 ohm c 807 16 pf b 241402 ef _ bdin _ 03 - 15 - 2010 rf in v dd pin g 2 gate dut side 1 side 2 reference circuit reference circuit input schematic for ? = 2380 mhz this reference circuit is designed to test only one side at a time. this block diagram shows the configuration for testing side 2. to test side 1, move capacitors c807 and c901 to close the circuit to side 1.
PTFB241402F customer-specific spec ? not for general release data sheet 7 of 13 rev. 03, 2010-04-19 tl 936 1 2 3 tl 934 c 908 10000000 pf tl 935 tl 933 tl 932 tl 937 tl 938 tl 914 tl 911 tl 913 tl 912 1 2 3 tl 939 tl 910 1 2 3 tl 909 1 2 3 tl 944 1 2 3 tl 946 1 2 3 tl 945 tl 943 1 2 3 tl 942 tl 941 tl 940 1 2 3 tl 908 c 909 10000000 pf 1 2 3 tl 923 tl 922 tl 921 tl 920 tl 919 1 2 3 tl 918 tl 917 c 907 100000000 pf tl 916 tl 915 tl 928 tl 925 1 2 3 tl 931 tl 930 1 2 3 tl 926 tl 924 tl 927 tl 929 rf out 1 2 3 4 s 1 1 2 3 4 s 2 tl 907 tl 906 1 2 3 tl 905 tl 904 tl 903 c 906 2 . 4 pf tl 902 c 905 2 . 4 pf c 904 7 . 5 pf c 903 100000000 pf tl 901 c 901 7 . 5 pf c 902 7 . 5 pf b 241402 ef _ bdout _ 03 - 15 - 2010 pin d 2 drain dut pin d 1 drain dut v dd v dd side 1 side 2 reference circuit (cont.) reference circuit output schematic for ? = 2380 mhz
PTFB241402F customer-specific spec ? not for general release data sheet 8 of 13 rev. 03, 2010-04-19 ptfb 241402 _ out _ 01 ( 60 ) c 906 c 905 c 909 c 904 c 902 c 908 c 901 s 2 c 903 s 1 c 907 ro 4350 , . 020 b 241402 ef _ cd _ 04 - 19 - 2010 + ro 4350 , . 020 ( 60 ) s 5 r 809 s 3 c 801 c 806 r 807 r 808 l 802 r 806 c 807 c 808 c 802 l 801 r 805 r 803 s 1 s 4 s 6 c 804 c 805 r 802 c 803 r 801 r 804 s 2 ptfb 241402 _ in _ 01 v dd v dd v dd reference circuit (cont.) reference circuit assembly diagram (not to scale)* * gerber files for this circuit available on request
PTFB241402F customer-specific spec ? not for general release data sheet 9 of 13 rev. 03, 2010-04-19 reference circuit (cont.) circuit assembly information dut PTFB241402F ldmos transistor pcb ltn/PTFB241402F 0.508 mm [.020"] thick, e r = 3.66 rogers 4350, 1 oz. copper component description suggested manufacturer p/n input c801, c802 capacitor, 10 f digi-key 490-3905-6-nd c803, c804, c805 capacitor, 1000 pf digi-key pcc1772ct-nd c806, c808 chip capacitor, 1.2 pf atc atc100a1r2bw150xb c807 chip capacitor, 16 pf atc atc100a160fw150xb l801, l802 inductor, 22 nh digi-key tks2349ct-nd r801 resistor, 1200 w digi-key p1.2kgct-nd r802 resistor, 2000 w digi-key p2.0kect-nd r803, r809 resistor, 10 w digi-key p10ect-nd r804 resistor, 1300 w digi-key p1.3kgct-nd r805, r807 resistor, 3000 w digi-key p3.0kect-nd r806, r808 resistor, 10 w digi-key p10gct-nd s1 voltage regulator national semiconductor lm7805 s2, s3 potentiometer, 2k w digi-key 3224w-202ect-nd s4, s5 emi filter, 2 - 4 a, 0.1 - 2.2 f murata nfm18p s6 transistor infineon technologies bcp56 output c901, c902, c904 chip capacitor, 7.5 pf atc atc100b7r5bw500xb c903, c907 capacitor, 100 f digi-key pce3718ct-nd c905, c906 chip capacitor, 2.4 pf atc atc100a2r4bw150xb c908, c909 capacitor, 10 f digi-key 490-1891-2-nd s1, s2 emi filter, 6 a, 1.5 f murata nfm55p
PTFB241402F customer-specific spec ? not for general release data sheet 10 of 13 rev. 03, 2010-04-19 reference circuit (cont.) electrical characteristics at 2380 mhz transmission electrical dimensions: mm dimensions: mils line characteristics input tl801 0.114 l , 35.71 w w = 1.905, l = 8.479 w = 75, l = 334 tl802, tl838 0.005 l , 51.98 w w = 1.087, l = 0.356 w = 43, l = 14 tl803, tl804 w = 1.087 w = 43 tl805 0.063 l , 35.71 w w = 1.905, l = 4.674 w = 75, l = 184 tl806, tl807 w1 = 3.810, w2 = 5.842 w1 = 150, w2 = 230 tl808 0.094 l , 51.98 w w = 1.087, l = 7.163 w = 43, l = 282 tl809 w1 = 1.087, w2 = 1.087 w1 = 43, w2 = 43 tl810 w1 = 1.087, w2 = 5.842 w1 = 43, w2 = 230 tl811, tl812 0.011 l , 14.61 w w1 = 5.842, w2 = 5.842, w3 = 0.762 w1 = 230, w2 = 230, w3 = 30 tl813, tl839 0.018 l , 51.98 w w1 = 1.087, w2 = 1.087, w3 = 1.397 w1 = 43, w2 = 43, w3 = 55 tl814 0.066 l , 14.61 w w = 5.842, l = 4.699 w = 230, l = 185 tl815, tl817, tl818, 0.026 l , 35.71 w w1 = 1.905, w2 = 1.905, w3 = 1.905 w1 = 75, w2 = 75, w3 = 75 tl820, tl821, tl823 tl816 0.146 l , 51.98 w w = 1.087, l = 11.118 w = 43, l = 438 tl819 0.068 l , 35.71 w w = 1.905, l = 5.080 w = 75, l = 200 tl822, tl829 0.029 l , 35.71 w w = 1.905, l = 2.184 w = 75, l = 86 tl824, tl837 0.033 l , 35.71 w w = 1.905, l = 2.477 w = 75, l = 98 tl825 0.010 l , 35.71 w w = 1.905, l = 0.711 w = 75, l = 28 tl826, tl827 0.010 l , 35.71 w w1 = 1.905, w2 = 1.905, w3 = 0.762 w1 = 75, w2 = 75, w3 = 30 tl828 0.146 l , 35.71 w w = 1.905, l = 10.897 w = 75, l = 429 tl830 0.094 l , 51.98 w w = 1.087, l = 7.163 w = 43, l = 282 tl831 0.066 l , 14.61 w w = 5.842, l = 4.699 w = 230, l = 185 tl832, tl834 0.027 l , 35.71 w w = 1.905, l = 2.032 w = 75, l = 80 tl833 0.036 l , 35.71 w w = 1.905, l = 2.705 w = 75, l = 107 tl835 0.014 l , 44.26 w w1 = 1.397, w2 = 1.397, w3 = 1.087 w1 = 55, w2 = 55, w3 = 43 tl836 0.032 l , 35.71 w w = 1.905, l = 2.408 w = 75, l = 95 tl840, tl843 0.010 l , 51.98 w w = 1.087, l = 0.762 w = 43, l = 30 tl841, tl842 0.026 l , 35.71 w w = 1.905, l = 1.905 w = 75, l = 75 output tl901, tl902 0.077 l , 28.85 w w = 2.540, l = 5.690 w = 100, l = 24 tl903 0.031 l , 28.85 w w = 2.540, l = 2.286 w = 100, l = 90 tl904 0.036 l , 28.85 w w = 2.540, l = 2.667 w = 100, l = 105 tl905, tl931 0.019 l , 28.85 w w1 = 2.540, w2 = 2.540, w3 = 1.397 w1 = 100, w2 = 100, w3 = 55 tl906 0.078 l , 14.61 w w = 5.842, l = 5.588 w = 230, l = 220 tl907 w1 = 0.003, w2 = 0.003, offset = 0.001 w1 = 3, w2 = 102, offset = 50 tl908, tl909 0.069 l , 28.85 w w1 = 2.540, w2 = 2.540, w3 = 5.080 w1 = 100, w2 = 100, w3 = 200 tl910 0.063 l , 51.98 w w = 1.087, l = 4.826 w = 43, l = 190 tl911, tl912 w = 1.087 w = 43 * table continued next page
PTFB241402F customer-specific spec ? not for general release data sheet 11 of 13 rev. 03, 2010-04-19 reference circuit (cont.) electrical characteristics at 2380 mhz transmission electrical dimensions: mm dimensions: mils line characteristics output tl913, tl914 w1 = 1.087, w2 = 5.842, w1 = 43, w2 = 230 tl915 0.078 l , 14.61 w w = 5.842, l = 5.588 w = 230, l = 220 tl916, tl925 w1 = 3.810, w2 = 5.842 w1 = 150, w2 = 230 tl917 0.063 l , 51.98 w w = 1.087, l = 4.826 w = 43, l = 190 tl918 0.014 l , 51.98 w w1 = 1.087, w2 = 1.087, w3 = 1.087 w1 = 43, w2 = 43, w3 = 43 tl919, tl920 0.027 l , 51.98 w w = 1.087, l = 2.032 w = 43, l = 80 tl921 0.117 l , 51.98 w w = 1.087, l = 8.890 w = 43, l = 350 tl922, tl940 0.009 l , 28.85 w w = 2.540, l = 0.655 w = 100, l = 26 tl923, tl926, tl942 0.025 l , 28.85 w w1 = 2.540, w2 = 2.540, w3 = 1.829 w1 = 100, w2 = 100, w3 = 72 tl944 tl924 0.031 l , 28.85 w w = 2.540, l = 2.286 w = 100, l = 90 tl927, tl929 w = 2.540 w = 100 tl928, tl941 0.086 l , 28.85 w w = 2.540, l = 6.363 w = 100, l = 251 tl930 0.036 l , 28.85 w w = 2.540, l = 2.667 w = 100, l = 105 tl932, tl936 0.073 l , 16.19 w w = 5.182, l = 5.207 w = 204, l = 205 tl933, tl937 0.050 l , 28.85 w w = 2.540, l = 3.670 w = 100, l = 145 tl934, tl939 0.038 l , 28.85 w w1 = 2.540, w2 = 2.540, w3 = 2.794 w1 = 100, w2 = 100, w3 = 110 tl935, tl938 0.136 l , 28.85 w w = 2.540, l = 10.020 w = 100, l = 395 tl943 w1 = 0.003, w2 = 0.003, offset = ?0.001 w1 = 3, w2 = 102, offset = ?50 tl945, tl946 0.036 l , 14.61 w w1 = 5.842, w2 = 5.842, w3 = 2.540 w1 = 230, w2 = 230, w3 = 100 pinout diagram lead connections for PTFB241402F drain drain gate gate source ( flange ) h - 37248 - 4 _ pd _ 03 - 23 - 2010 g 1 d 1 d 2 g 2
PTFB241402F customer-specific spec ? not for general release data sheet 12 of 13 rev. 03, 2010-04-19 package outline specifications package h-37248-4 19 . 431 0 . 510 [. 765 0 . 020 ] l c c l 2 x 12 . 700 [. 500 ] 4 x 3 . 810 [. 150 ] lid 9 . 398 [. 370 ] flange 9 . 779 [. 385 ] 2 x 4 . 826 0 . 510 [. 190 0 . 020 ] d 1 d 2 g 1 g 2 2 x 45 x 2 . 720 [ 45 x . 107 ] ( 8 . 890 [. 350 ]) 4 x r 0 . 762 + 0 . 127 - 0 . 380 [ r . 030 ] + 0 . 005 - 0 . 015 c l 19 . 812 0 . 200 [. 780 0 . 008 ] 3 . 759 + 0 . 254 - 0 . 127 [ . 148 ] + 0 . 010 - 0 . 005 sph 1 . 575 [. 062 ] 1 . 016 [. 040 ] 20 . 574 [. 810 ] s h - 37248 - 4 _ po _ 02 - 18 - 2010 d iagram notes?unless otherwise specified: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specified otherwise. 4. pins: d1, d2 = drains; s = source; g1, g2 = gates. 5. lead thickness: 0.102 +0.076/?0.025 [0.004+0.003/?0.001]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch] max. find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower
data sheet 13 of 13 rev. 03, 2010-04-19 ptfb241401f v1 customer-specific spec ? not for general release revision history: 2010-04-19 data sheet previous version: 2010-03-23 page subjects (major changes since last revision) all revised package option edition 2010-04-19 published by infineon technologies ag 81726 munich , germany ? 2010 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international


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